Electron microscopy and materials science researcher (M/F)

Job title: Electron microscopy and materials science researcher (M/F)


Location: Toulouse

Job Description: Offer DescriptionTo contribute to the various objectives of the project using different techniques, notably but not only advanced transmission electron microscopy techniques such as STEM/HAADF, EELS and EDX. This “expert” will interact with the group members (staff scientists and postdocs) and complement their findings by providing information on the atomic ordering and redistribution of chemical elements following thermal annealing or PCM cell operations.– Prepare thin lamellas by FIB from deposited layers or PCM devices from 300 mm wafers.
– Obtain images and chemical maps of polycrystalline layers or PCM devices by TEM and STEM (EELS, EDX).
– Write reports and publicationsPhase Change Memory (PCM) appears as a promising alternative technology to overcome the limitations of flash memories. Phase Change Memories employ thin films of chalcogenide materials, a GeSbTe (GST) alloy, that is locally and reversibly switched between its crystalline and amorphous phase states using heating pulses (i.e. through electrical pulses). Information is contained in the pronounced difference of electrical conductivity between crystalline and amorphous phases of the GeSbTe alloy.
Recent works, including ours, have demonstrated that beyond digital (2 bits) memories, these alloys can also be used to fabricate multi-level memories (several bits) remembering their “history”, i.e. able to reproduce synaptic activity and offer devices for artificial intelligence.
Despite huge potentiality, developing and industrializing PCMs for advanced nodes require in depth understanding of the physical phenomena involved in the switching and storage mechanisms, this in the frame of scaled down dimensions. At the moment, most IC manufacturers are exploring the potential of such materials, in collaboration with academics, and this project is no exception.
In this context, CEMES is collaborating with STMicroelectronics within a large project from which this position is granted. The project goals focus at:
1) Identifying the mechanisms and parameters governing crystallization in Ge-GST materials and the changes resulting from doping with impurities, in full sheets and within nanometric cells.
2) Understanding the influence of morphology of GST domains (phases, grain sizes, voids…) on the electrical characteristics of the material and on the performance and reliability (drift, retention / cycling) of PCMs based on these materials.
3) Exploring the possibility to access to Intermediate Resistivity States (IRS) and mimic synaptic activity (analog storage, cumulative storage and plasticity) using Ge-GST cells.
To reach these objectives, we have set up a group of three permanent scientists of complementary expertise (experiments and theory, materials science, structural and electrical properties), one expert engineer from STMicroelectronics, 2 postdocs and one PhD student. While already extensively using XRD (ex situ and in situ at the synchrotron), SIMS, I(V), C(V), CTEM (in situ and ex situ), HREM and EDX, we are willing to extend the characterization skills of the group by integrating a new postdoc with excellent and recognized expertise in advanced TEM techniques, notably by STEM/HAADF and EELS for elemental mapping at the nanoscale.RequirementsResearch Field Physics Education Level PhD or equivalentResearch Field Physics Education Level PhD or equivalentResearch Field Physics Education Level PhD or equivalentLanguages FRENCH Level BasicResearch Field Physics » Condensed matter properties Years of Research Experience NoneResearch Field Physics » Solid state physics Years of Research Experience NoneResearch Field Physics » Surface physics Years of Research Experience NoneAdditional InformationEligibility criteriaWe are looking for a doctor in Physics or Materials Science with demonstrated experience in metallurgy and/or microelectronics using advanced transmission electron microscopy techniques (HREM, STEM, HAADF, EELS, EDX, in situ TEM …) and sample preparation by FIB. Open minded and autonomous, he/she is willing to interact with others scientists and contribute to a common goal. He/she is motivated by the development of fundamental and applied research in collaboration with a major industrial player in the field of advanced electronic devices.Website for additional job detailsWork Location(s)Number of offers available 1 Company/Institute Centre d’élaboration de matériaux et d’études structurales Country France City TOULOUSE GeofieldWhere to apply WebsiteContact CityTOULOUSE WebsiteSTATUS: EXPIRED


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